Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. Bulk GaN is non-toxic and biocompatible. IEEE 2014, "Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters", Strongly localized donor level in oxygen doped gallium nitride, "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)", Blue Diode Research Hastens Day of Large-Scale Solid-State Light Sources, "Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods", "Enhancement Mode GaN MOSFET Delivers Impressive Performance", "SiC and GaN Vie for Slice of the Electric Vehicle Pie", "Making the new silicon: Gallium nitride electronics could drastically cut energy usage", "Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate", "Gallium Nitride-Based Modules Set New 180-Day Standard For High Power Operation. Commercially, GaN crystals can be grown using molecular beam epitaxy or metalorganic vapour phase epitaxy. Gallium nitrate (brand name Ganite) is the gallium salt of nitric acid with the chemical formula Ga(NO 3) 3.It is a drug used to treat symptomatic hypercalcemia secondary to cancer. Ich möchte dieses Buch auf dem Kindle lesen. Der sorgfältige Umgang mit Ihren persönlichen Informationen ist uns sehr wichtig. On April 8 2020, Saab flight tested its new GaN designed AESA X-band radar in a JAS-39 Gripen fighter. A second generation of devices with shorter gate lengths will address higher frequency telecom and aerospace applications. Le nitrure de gallium (GaN) est un semi-conducteur à large bande interdite (3,4 eV) utilisé en optoélectronique et dans les dispositifs de grande puissance ou de haute fréquence. The environment, health and safety aspects of gallium nitride sources (such as trimethylgallium and ammonia) and industrial hygiene monitoring studies of MOVPE sources have been reported in a 2004 review.[49]. Wir verwenden Cookies und ähnliche Tools, um Ihr Einkaufserlebnis zu verbessern, um unsere Dienste anzubieten, um zu verstehen, wie die Kunden unsere Dienste nutzen, damit wir Verbesserungen vornehmen können, und um Werbung anzuzeigen, einschließlich interessenbezogener Werbung. [30] High-voltage (800 V) Schottky barrier diodes (SBDs) have also been made.[30]. En effet, celui-ci possède des propriétés intéressantes comme une conductivité plus importante des électrons. Wenn Sie nicht alle Cookies akzeptieren möchten oder mehr darüber erfahren wollen, wie wir Cookies verwenden, klicken Sie auf "Cookie-Einstellungen anpassen". It works by preventing the breakdown of bone through the inhibition of osteoclast activity, thus lowering the amount of free calcium in the blood. Le mode de croissance observé est un passage de 3D à 2D au cours de l'épaississement de la couche de GaN. The crystal structures are related to those of ZnS with gallium in tetrahedral positions. Traductions en contexte de "en nitrure de gallium" en français-anglais avec Reverso Context : Des procédés et structures similaires peuvent permettre d'obtenir d'autres dispositifs à semi-conducteurs en nitrure de gallium. This abundance of electrons is known as a two dimensional electron gas (2DEG). GaN is a very hard (Knoop hardness 14.21 GPa[12]:4), mechanically stable wide-bandgap semiconductor material with high heat capacity and thermal conductivity. Gallium nitrate is also used to synthesize other gallium compounds. Gallium(III) sulfide, Ga 2 S 3, is a compound of sulfur and gallium, that is a semiconductor that has applications in electronics and photonics.. Abhängig von der Lieferadresse kann die USt. [27] Only n-channel transistors were available. III; Fischer, S.; Meyer, B.K. 1). Oktober 2011). Gallium nitride is a major semiconductor compounds widely used for micro and opto electronics applications. This process takes place in a vacuum. Translator. [19] Scientists at ARL experimentally obtained a peak steady-state velocity of 1.9 x 107 cm/s, with a transit time of 2.5 picoseconds, attained at an electric field of 225 kV/cm. It exists as several polymorphs, all of which are white, water-insoluble solids. Une équipe dirigée par Shuji Nakamura, développeur de lasers et de diodes électroluminescentes bleues à base de nitrure de gallium, vient de créer une nouvelle technologie de croissance au nitrure de gallium permettant de produire de nouveaux films avec des caractéristiques de performances nouvelles … Gallium kristallisiert nicht in einer der sonst häufig bei Metallen anzutreffenden Kristallstrukturen, sondern in seiner stabilsten Modifikation in einer orthorhombischen Struktur mit Gallium-Dimeren. Oktober 2011, Editions universitaires europeennes (19. Hauptgruppe, 13. devices have shown stability in radiation environments, Metal-Organic Vapour Phase Epitaxy (MOVPE), "Investigation of the Thermal Properties of Gallium Nitride Using the Three Omega Technique", 10.1002/1521-396X(200101)183:1<81::AID-PSSA81>3.0.CO;2-N, "Enhancement Mode Gallium Nitride (eGaN) FET Characteristics under Long Term Stress", "Review of GaN-based devices for terahertz operation", Gallium Nitride as an Electromechanical Material. Bitte versuchen Sie es erneut. C'est un composé à gap direct, dont la bande interdite peut varier théoriquement entre 0,67 et 3,4 eV, en fonction du ratio In/Ga. To enhance the transistor, a positive Il est peu sensible aux rayonnements ionisants (comme tous les autres nitrures du groupe III), ce qui fait de lui un matériau approprié pour les … The U.S. Army Research Laboratory (ARL) provided the first measurement of the high field electron velocity in GaN in 1999. Unser Zahlungssicherheitssystem verschlüsselt Ihre Daten während der Übertragung. Wählen Sie ein Land/eine Region für Ihren Einkauf. The first GaN-based high-brightness LEDs used a thin film of GaN deposited via Metal-Organic Vapour Phase Epitaxy (MOVPE) on sapphire. A potential mass-market application for GaN-based RF transistors is as the microwave source for microwave ovens, replacing the magnetrons currently used. Sie hören eine Hörprobe des Audible Hörbuch-Downloads. [13] In its pure form it resists cracking and can be deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice constants. EN. In addition, GaN offers promising characteristics for THz devices. Leider ist ein Problem beim Speichern Ihrer Cookie-Einstellungen aufgetreten. GaN-based electronics (not pure GaN) has the potential to drastically cut energy consumption, not only in consumer applications but even for power transmission utilities. Elle enseigne à la faculté des sciences de Monastir-Tunisie. [27] These devices were designed to replace power MOSFETs in applications where switching speed or power conversion efficiency is critical. Military and space applications could also benefit as devices have shown stability in radiation environments.[10]. Traductions en contexte de "du nitrure de gallium" en français-anglais avec Reverso Context : En conséquence, une croissance ininterrompue du nitrure de gallium peut être réalisée. Les nitrures [1] sont des composés où l'azote est au nombre d'oxydation –III. GaN with a high crystalline quality can be obtained by depositing a buffer layer at low temperatures. Using ultrafast spectroscopy techniques, we have investigated the excitonic spin relaxation in GaN epilayers grown on sapphire and SiC substrates. Entdecken Sie Empfehlungen, Bestseller und mehr in unserem Shop für französische Bücher. Es hat die Elektronenkonfiguration [Ar]3d 10 4s 2 4p und kommt in der Natur in zwei Isotopen vor (Tab. ", "GaN Extends Range of Army's Q-53 Radar System", "U.S. Army Awards Lockheed Martin Contract Extending AN/TPQ-53 Radar Range", "Lockheed Martin Demonstrates Mature, Proven Radar Technology During U.S. Army's Sense-Off", "Gripen C/D Flies with Saab's new AESA Radar for the First Time", "Saab first in its industry to bring GaN to market", "Saab's Giraffe 1X Radar Offers a Man-Portable 75km Detection Range", "Saab Receives Swedish Order for Giraffe 4A and Arthur Radars", "Arexis - Outsmarting threats by electronic attack", "Saab to Supply Key Components in Support of the U.S. Marine Corps Ground/Air Task Oriented Radar (G/ATOR) Program", "III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications", "Research Finds Gallium Nitride is Non-Toxic, Biocompatible – Holds Promise For Biomedical Implants", https://en.wikipedia.org/w/index.php?title=Gallium_nitride&oldid=1015512951, Chemical articles with multiple compound IDs, Multiple chemicals in an infobox that need indexing, Pages using collapsible list with both background and text-align in titlestyle, Articles containing unverified chemical infoboxes, Creative Commons Attribution-ShareAlike License, the implantation of fluorine ions under the gate (the negative charge of the F-ions favors the depletion of the channel), the use of a MIS-type gate stack, with recess of the AlGaN, the integration of a cascaded pair constituted by a normally-on GaN transistor and a low voltage silicon MOSFET, the use of a p-type layer on top of the AlGaN/GaN heterojunction, This page was last edited on 1 April 2021, at 22:14. an der Kasse variieren. on / resistive when the gate-source voltage is zero). [15] However, the Si and Mg atoms change the way the GaN crystals grow, introducing tensile stresses and making them brittle. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. [13] GaN can be doped with silicon (Si) or with oxygen[14] to n-type and with magnesium (Mg) to p-type. GaN crystals can be grown from a molten Na/Ga melt held under 100 atmospheres of pressure of N2 at 750 °C. Traductions en contexte de "nitrure de gallium-indium" en français-anglais avec Reverso Context : Le Nitrure de gallium-indium (InGaN, InxGa1-xN) est un semi-conducteur III-V composé de nitrure de gallium (GaN) et de nitrure d'indium (InN). For other uses, see, Except where otherwise noted, data are given for materials in their, Bougrov V., Levinshtein M.E., Rumyantsev S.L., Zubrilov A., in, Wetzel, C.; Suski, T.; Ager, J.W. [16] Gallium nitride compounds also tend to have a high dislocation density, on the order of 108 to 1010 defects per square centimeter. Ils constituent une large famille dont certains représentants ont des applications concrètes comme le nitrure de titane dont la dureté est mise à profit pour renforcer certains outils.. L'ion N 3− est isoélectronique de l'ion oxyde O 2− et de l'ion fluorure F −. Gallium ist ein selten vorkommendes chemisches Element mit dem Elementsymbol Ga und der Ordnungszahl 31. Stattdessen betrachtet unser System Faktoren wie die Aktualität einer Rezension und ob der Rezensent den Artikel bei Amazon gekauft hat. Le traitement Si/N, lors de l'élaboration du GaN à haute température et à pression atmosphérique par Epitaxie en Phase Vapeur par pyrolyse d'OrganoMétalliques (EPVOM), améliore nettement la qualité morphologique, électrique, structurale et optique. 164–165, CS1 maint: multiple names: authors list (. Gallium(III) trioxide is an inorganic compound with the formula Ga 2 O 3. Geben Sie es weiter, tauschen Sie es ein, © 1998-2021, Amazon.com, Inc. oder Tochtergesellschaften. Par la suite un dopage de type p et n dans GaN est réalisé en utilisant respectivement le magnésium et le silicium, conduisant ainsi à une homojonction p/n pour fabriquer une diode électroluminescente bleue. Il présente, de plus, une grande résistanc… [36] The AN/TPQ-53 radar system provided enhanced performance, greater mobility, increased reliability and supportability, lower life-cycle cost, and reduced crew size compared to the AN/TPQ-36 and the AN/TPQ-37 systems.[34]. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling. Le nitrure de gallium (GaN) est un matériau semi-conducteur de la famille III-V à large bande interdite directe, ayant des propriétés électriques et thermiques intéressantes. Structure. R-Z. Nachdem Sie Produktseiten oder Suchergebnisse angesehen haben, finden Sie hier eine einfache Möglichkeit, diese Seiten wiederzufinden. Elle a soutenu sa thèse de doctorat en 2006 à l'université ElManar II de Tunis. Open menu. USt. For example, GaN is the substrate which makes violet laser diodes possible, … Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. [28], GaN-based violet laser diodes are used to read Blu-ray Discs. Translate texts with the world's best machine translation technology, developed by the creators of Linguee. L'invention concerne un dispositif en nitrure de gallium (GaN) à protection contre les surtensions fondée sur un courant de fuite. [23] Group III nitride semiconductors are, in general, recognized as one of the most promising semiconductor families for fabricating optical devices in the visible short-wavelength and UV region. [33], The U.S. Army funded Lockheed Martin to incorporate GaN active-device technology into the AN/TPQ-53 radar system to replace two medium-range radar systems, the AN/TPQ-36 and the AN/TPQ-37. Ses travaux de recherche se focalisent sur l'élaboration des semi-conducteurs III-V appliqués aux dispositifs optoélectroniques. The compound is a very hard material that has a Wurtzite crystal structure. Hinzufügen war nicht erfolgreich. These transistors are built by growing a thin layer of GaN on top of a standard silicon wafer. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic,[8][9] high-power and high-frequency devices. Passivation de la surface du nitrure de gallium: brique de base pour la technologie MOS-GaN May 2013 Conference: 14 èmes Journées Nano, Micro et Optoélectronique (JNMO) - JNTE 2013 Utilisez le dictionnaire Anglais-Français de Reverso pour traduire gallium et beaucoup d’autres mots. [17] The wide band-gap behavior of GaN is connected to specific changes in the electronic band structure, charge occupation and chemical bond regions.[18]. Cette intégration permet au groupe isérois d’étendre son portefeuille de substrats innovants au nitrure de gallium (GaN). ), (Französisch) Taschenbuch – 19. Um die Gesamtbewertung der Sterne und die prozentuale Aufschlüsselung nach Sternen zu berechnen, verwenden wir keinen einfachen Durchschnitt. Linguee. With this information, the electron mobility was calculated, thus providing data for the design of GaN devices. Pour augmenter son rendement optique, une intercalation de puits quantiques InGaN est effectuée. Le gallium est principalement utilisé pour la fabrication de divers matériaux semi-conducteur, l'arséniure de gallium, de formule GaAs, étant le plus courant d'entre-eux. IUPAC-Gruppe, oder Borgruppe. Periode und ist das dritte Element der 3. [37] In 2019, Lockheed Martin's partner ELTA Systems Limited, developed a GaN-based ELM-2084 Multi Mission Radar that was able to detect and track air craft and ballistic targets, while providing fire control guidance for missile interception or air defense artillery. La société Soitec, acteur majeur de la conception et la production de matériaux semi-conducteurs innovants, a signé un accord définitif en vue d’acquérir la société belge EpiGaN. The mixture of GaN with In (InGaN) or Al (AlGaN) with a band gap dependent on ratio of In or Al to GaN allows the manufacture of light-emitting diodes (LEDs) with colors that can go from red to ultra-violet.[23]. Further processing forms a depletion region under the gate. The first gallium nitride metal semiconductor field-effect transistors (GaN MESFET) were experimentally demonstrated in 1993[26] and they are being actively developed. [30] Since 2008 these can be formed on a silicon substrate. .K-1 suivant sa microstructure et sa forme (monocristal)5, film mince6, nanofil7...). [34][35] The AN/TPQ-53 radar system was designed to detect, classify, track, and locate enemy indirect fire systems, as well as unmanned aerial systems. Symposium, Technical Abstract Book, Session TH3D, pp. The very high breakdown voltages,[24] high electron mobility and saturation velocity of GaN has also made it an ideal candidate for high-power and high-temperature microwave applications, as evidenced by its high Johnson's figure of merit. Procede de preparation d'une couche de nitrure de gallium Download PDF Info Publication number EP1290721B1. | Benzarti, Zohra | ISBN: 9786131597275 | Kostenloser Versand für alle Bücher mit Versand und Verkauf duch Amazon. [39][40][41][42] Saab also delivers major subsystems, assemblies and software for the AN/TPS-80 (G/ATOR)[43], GaN nanotubes and nanowires are proposed for applications in nanoscale electronics, optoelectronics and biochemical-sensing applications. ... gallium characterised nitride growth Prior art date 2000-06-09 Legal status (The legal status is an assumption and is not a legal conclusion. Lieferung verfolgen oder Bestellung anzeigen, Recycling (einschließlich Entsorgung von Elektro- & Elektronikaltgeräten). Although no commercial applications exist, Ga 2 O 3 is an intermediate in the purification of gallium, which is consumed almost exclusively as gallium arsenide. [29], GaN based MOSFET and MESFET transistors also offer advantages including lower loss in high power electronics, especially in automotive and electric car applications. Nitrure: Nitrure de Gallium, Nitrure de Bore, Nitrure D'Indium, Nitrure de Plutonium, Nitrure D'Uranium, Nitrure D'Aluminium | | ISBN: 9781159830632 | Kostenloser Versand für alle Bücher mit Versand und Verkauf duch Amazon. Another seemingly viable solution for realizing enhancement-mode GaN-channel HFETs is to employ a lattice-matched quaternary AlInGaN layer of acceptably low spontaneous polarization mismatch to GaN. The large band gap means that the performance of GaN transistors is maintained up to higher temperatures (~400 °C[25]) than silicon transistors (~150 °C[25]) because it lessens the effects of thermal generation of charge carriers that are inherent to any semiconductor. C'est un composé binaire (groupe III/groupe V) qui possède une semiconductivité intrinsèque. As Ga will not react with N2 below 1000 °C, the powder must be made from something more reactive, usually in one of the following ways: Gallium nitride can also be synthesized by injecting ammonia gas into molten gallium at 900-980 °C at normal atmospheric pressure.[48]. Lockheed Martin fielded other tactical operational radars with GaN technology in 2018, including TPS-77 Multi Role Radar System deployed to Latvia and Romania. [44][45], When doped with a suitable transition metal such as manganese, GaN is a promising spintronics material (magnetic semiconductors).[23]. Preisangaben inkl. Le développement de substrats au nitrure de gallium s'effectue par surcroissance latérale épitaxiale à l'aide de multiples étapes. This process can be further modified to reduce dislocation densities. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Im Periodensystem steht es in der 4. This article is about Gallium nitride, the chemical compound. Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. Wir geben Ihre Zahlungsdaten nicht an Dritte weiter und verkaufen Ihre Daten nicht an Dritte. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Daneben sind … Docteur en physique des matériaux semi-conducteurs. Look up words and phrases in comprehensive, reliable bilingual dictionaries and search through billions of online translations. GaN HEMTs have been offered commercially since 2006, and have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. ; Grzegory, I.; Porowski, S. (1996), 2010 IEEE Intl. In 2010, the first enhancement-mode GaN transistors became generally available. This allows the FETs to maintain costs similar to silicon power MOSFETs but with the superior electrical performance of GaN. [11] Due to high power density and voltage breakdown limits GaN is also emerging as a promising candidate for 5G cellular base station applications. Wählen Sie eine Sprache für Ihren Einkauf. First, an ion beam is applied to the growth surface in order to create nanoscale roughness. [20] Such high-quality GaN led to the discovery of p-type GaN,[15] p-n junction blue/UV-LEDs[15] and room-temperature stimulated emission[21] (essential for laser action). Le mode de croissance observ est un passage de 3D 2D au cours de l' paississement de la couche de GaN. Le gallium est l'élément chimique de numéro atomique 31, de symbole Ga. Il appartient au groupe 13 du tableau périodique ainsi qu'à la famille des métaux pauvres. C'est le second matériau semi-conducteur le plus utilisé derrière le silicium. Gallium nitride substrates are grown by … Unlike silicon transistors which switch off due to power surges, GaN transistors are typically depletion mode devices (i.e. According to the selection rules for optical transitions, we use circularly polarized ultrashort (~100 fs) laser pulses to achieve optical orientation of exciton populations and study their temporal evolution. Ihre zuletzt angesehenen Artikel und besonderen Empfehlungen. Bitte versuchen Sie es erneut. Traductions en contexte de "NITRURE DE GALLIUM" en français-anglais avec Reverso Context : de nitrure de gallium, base de nitrure de gallium L'invention concerne une diode electroluminescente (DEL) a base de nitrure de gallium (GaN), dans laquelle la lumiere est extraite par une face azote (face N) (42) de la DEL ; et une surface de ladite face (42) est rendue rugueuse par la formation, sur celle-ci, d'un ou de plusieurs cones de forme hexagonale. Zugelassene Drittanbieter verwenden diese Tools auch in Verbindung mit der Anzeige von Werbung durch uns. Elaboration des Nitrures de Gallium avec traitement Si/N: Application aux Diodes Electroluminescentes (Omn.Univ.Europ.) Es ist ein silberweißes, leicht zu verflüssigendes Metall. Other substrates used are zinc oxide, with lattice constant mismatch of only 2% and silicon carbide (SiC). An aluminum gallium nitride (AlGaN) layer is deposited resulting in a piezoelectric polarization, with an abundance of electrons being generated just below the AlGaN that is highly conductive. Elaboration des Nitrures de Gallium avec traitement Si/N: Application aux Diodes Electroluminescentes (Omn.Univ.Europ. Then, the surface is polished. High-brightness GaN light-emitting diodes (LEDs) completed the range of primary colors, and made applications such as daylight visible full-color LED displays, white LEDs and blue laser devices possible. Blog Press Information. GaN transistors are suitable for high frequency, high voltage, high temperature and high efficiency applications. There are four polymorphs, α (hexagonal), α' (monoclinic), β(hexagonal) and γ(cubic).The alpha form is yellow. Potential markets for high-power/high-frequency devices based on GaN include microwave radio-frequency power amplifiers (such as those used in high-speed wireless data transmission) and high-voltage switching devices for power grids. GaN dust is an irritant to skin, eyes and lungs. [22] This has led to the commercialization of high-performance blue LEDs and long-lifetime violet-laser diodes, and to the development of nitride-based devices such as UV detectors and high-speed field-effect transistors. [50] Therefore, it may be used in the electrodes and electronics of implants in living organisms. Außerdem analysiert es Rezensionen, um die Vertrauenswürdigkeit zu überprüfen. In spatial or medical environment, the GaN based devices experience electronic irradiation or ionic bombardments which induces atomic displacements in the GaN crystal. Gallium, Ga, Element der Hauptgruppe III des Periodensystems mit Ordnungszahl 31. Suggest as a translation of "gallium nitrate" Copy; DeepL Translator Linguee. [38] Saab already offers products with GaN based radars, like the Giraffe radar, Erieye, Globaleye, and Arexis EW. Le gallium est utilisé pour les dépôts en couche mince en épitaxie en phase gazeuse ( MOCVD) pour le dépôt de couches de GaAs ou de GaN épitaxiées, sous deux formes : sous forme de triméthylgallium (dit TMGa, de formule (CH 3) 3 Ga dont le numéro CAS est 1445-79-0) ou. Several methods have been proposed to reach normally-off (or E-mode) operation, which is necessary for use in power electronics:[31][32], They are also utilized in military electronics such as active electronically scanned array radars. Linguee Apps . Le Nitrure de gallium-indium (InGaN, In x Ga 1-x N) est un semi-conducteur III-V composé de nitrure de gallium (GaN) et de nitrure d'indium (InN). Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. Shipman, Matt and Ivanisevic, Albena (24 October 2011). Le traitement Si/N, lors de l' laboration du GaN haute temp rature et pression atmosph rique par Epitaxie en Phase Vapeur par pyrolyse d'OrganoM talliques (EPVOM), am liore nettement la qualit morphologique, lectrique, structurale et optique. Das Halbmetall Gallium ist Bestandteil der Zinkblende. Wählen Sie die Kategorie aus, in der Sie suchen möchten. The compound is a very hard material that has a Wurtzite crystal structure.
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